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| VSF741C1 Visible Light Emitting Diode RELATIVE POWER OUTPUT(%) High-output Power Compact High Reliability APPLICATIONS Optical Switches Optical Sensors Medical Application FEATURES @ Anode Cathode Dimensions (Unit:mm) A SPECTRAL OUTPUT 120 100 80 60 40 20 0 690 740 790 WAVELENGTH(nm) 1. ABSOLUTE MAXIMUM RATINGS (Ta=25*Z) ITEM SYMBOL RATINGS Forward Current (DC) 50 IF Forward Current (Pulse)*1 0.5 IFP Reverse Voltage 5 VR Power Dissipation 120 PD Topr Operating Temp. -20 TO 85 Tstg Storage Temp. -30 TO 100 Junction Temp. 100 Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body UNIT mA A V mW *Z *Z *Z *Z To purchase this part contact Marktech Optoelectronics at 800.984.5337 Marktech Optoelectronics www.marktechopto.com VSF741C1 Visible Light Emitting Diode MIN TYP 4.5 1.8 740 30 25 *| *| 35 -0.6 -1.9 MAX 2.3 100 UNIT mW V EA nm nm deg. nS nS pF %/*Z mV/*Z RELATIVE POWER vs FORWARD FORWARD I-V CHARACTERISTICS RADIATION PATTERN CURRENT 300 120 60 50 100 200 40 80 30 60 100 20 40 10 20 0 0 0 0 1 2 3 20 0 10 30 40 50 -90 60 -60 -30 0 30 FORWARD CURRENT(mA) BEAM ANGLE(deg.) FORWARD VOLTAGE(V) RELATIVE POWER OUTPUT(%) FORWARD VOLTAGE(V) RELATIVE POWER OUTPUT(%) RELATIVE POWER OUTPUT(%) 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25*Z) ITEM CONDITIONS SYMBOL Power Output IF=20mA PO Forward Voltage IF=20mA VF Reverse Current VR=5V IR Peak Wavelength Ep IF=20mA Spectral Line Half Width E IF=20mA Half Intensity Beam Angle AE IF=20mA Rise Time IFP=20mA Tr Fall Time IFP=20mA Tf Junction Capacitance 1MHz ,V=0V Cj Temp. Coefficient of PO IF=10mA P/T Temp. Coefficient of VF IF=10mA V/T FORWARD CURRENT(mA) 60 790 POWER OUTPUT vs TEMPERATURE FORWARD VOLTAGE vs TEMPERATURE THERMAL DERATING CURVE IF=10mA IF=10mA 140 60 3 120 2.5 50 100 2 40 80 1.5 30 60 1 20 40 0.5 10 20 0 0 0 -30 0 30 60 -30 0 30 60 -30 90 0 30 60 90 AMBIENT TEMPERATURE(*Z) AMBIENT TEMPERATURE(*Z) AMBIENT TEMPERATURE(*Z) FORWARD CURRENT(mA) |
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